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STTA9012TV1/2
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY. LOW INDUCTANCE PACKAGE < 5 nH. INSULATED PACKAGE : Electrical insulation : 2500VRMS Capacitance : < 45pF. DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all "freewheel mode" operations. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 s F = 5kHz square tp = 10ms sinusoidal Value 1200 1200 150 700 420 - 65 to + 150 150 Unit V V A A A C C They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. 2 x 45A 1200V 65ns 1.85V
K1 A1 K2 A1 K2 A2 A2 K1
STTA9012TV1
STTA9012TV2
ISOTOPTM
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November1999 - Ed: 6B
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THERMAL AND POWER DATA (per diode) Symbol Rth(j-c) Parameter Junction to case thermal resistance Test conditions Per diode Total Coupling P1 Pmax Conduction power dissipation Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 45A =0.5 Tc= 70C Tc= 62C Value 0.85 0.48 0.1 94 104 W W Unit C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Vto Rd
Test pulses :
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
* tp = 380 s, < 2% ** tp = 5 ms , < 2%
Test conditions IF =45A VR =0.8 x VRRM Ip < 3.IAV Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Min
Typ 1.3 3
Max 2.05 1.85 200 12 1.57 6
Unit V A mA V m
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS (per diode) TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/s VR =30V Tj = 125C VR = 600V dIF/dt = -360 A/s dIF/dt = -500 A/s Tj = 125C VR = 600V dIF/dt = -500 A/s IF =45A 60 50 IF =45A 1.2 Min Typ 65 115 A Max Unit ns
IRM
S factor
TURN-ON SWITCHING Symbol tfr Parameter Forward recovery time Test conditions Tj = 25C IF =45 A, dIF/dt = 360 A/s measured at 1.1 x VFmax Tj = 25C IF =45A, dIF/dt = 360 A/s IF =45A, dIF/dt = 500 A/s Min Typ Max 900 V 30 30 Unit ns
VFp
Peak forward voltage
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Fig. 1: Conduction losses versus average current (per diode).
P1(W) 100 80
=1 = 0.1 = 0.2 = 0.5
Fig. 2: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A) 500
Tj=125C
100
60 40
T
10
20 IF(av) (A) 0 0 5 10 15 20 25 30 35
=tp/T
tp
VFM(V)
40
45
50
1 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6
= 0.5
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode).
IRM(A) 80 70 60 50 40 30 20
IF=0.5*IF(av) VR=600V Tj=125C IF=IF(av) IF=2*IF(av)
0.4
= 0.2
0.2
= 0.1 Single pulse
tp(s) 1E-2 1E-1 1E+0 5E+0
10 0 0 100
0.0 1E-3
dIF/dt(A/s) 200 300 400 500
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode).
trr(ns) 1000 800 600 400 200
dIF/dt(A/s)
IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) VR=600V Tj=125C
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values).
S factor 1.60 1.40 1.20 1.00 0.80 0.60
IF<2*IF(av) VR=600V Tj=125C
dIF/dt(A/s)
0 100 200 300 400 500
0
0
100
200
300
400
500
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STTA9012TV1/2
Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj=125C). Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode).
VFP(V) 40
S factor
1.1
35 30 25 20
IRM
IF=IF(av)
Tj=125C
1.0
0.9
0.8
15 10 5
0.7
Tj(C) 50 75 100 125
dIF/dt(A/s)
0 100 200 300 400 500
0
25
Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode).
tfr(ns) 1000 900 800 700 600 500 400 300 200 100
VFR=1.1*VF max. IF=IF(av) Tj=125C
dIF/dt(A/s)
0
100
200
300
400
500
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APPLICATION DATA The 1200V TURBOSWITCH series has been designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. In such applications (Fig A to D),the way of calculating the power losses is given below :
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the tansistor due to the diode
Fig. A : "FREEWHEEL" MODE.
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
t T F = 1/T = t/T
LOAD
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STTA9012TV1/2
Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
PWM t T = t/T
F = 1/T
Fig. D : RECTIFIER DIODE.
STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS Conduction losses :
I
P1 = Vt0 . IF(AV) + Rd . IF2(RMS)
IF Rd VR V IR V tO VF
Reverse losses : P2 = VR . IR . (1 - )
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APPLICATION DATA (Cont'd) Fig. F: TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
VR x IRM 2 x ( 3 + 2 x S ) x F 6 x dIF dt VR x IRM x IL x ( S + 2 ) x F + 2 x dIF dt
I dI F /dt V I RM ta tb t dI R /dt VR
trr = ta + tb
I dIF /dt = VR /L V IRM ta tb t dI R /dt VR
trr = ta + tb S = tb/ta
DIODE
Turn-off losses (in the diode) : P3 =
VR x IRM 2 x S x F 6 x dIF dt
S = tb / ta
RECTIFIER OPERATION
Turn-off losses : (with non negligible serial inductance) P3' =
VR x IRM 2 x S x F + 6 x dIF dt L x IRM 2 x F 2
P3,P3' and P5 are suitable for power MOSFET and IGBT
Fig. G: TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
0 VF V Fp
t
Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F
1.1V F 0 tfr
VF t
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STTA9012TV1/2
PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193
24.80 typ.
0.976 typ.
Cooling method: by condiction (C) Recommended torque value: 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws for terminals). The screws supplied with the package are suitable for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. Ordering type STTA9012TV1 STTA9012TV2 Marking STTA9012TV1 STTA9012TV2 Package ISOTOP ISOTOP Weight 27g. without screws Base qty 10 10 Delivery mode Tube Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8

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